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NCUEIR > College of Science > Department of Physics > Proceedings > Item 987654321/12475

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12475

Title:	Optical Characteristics of Yellowish Green InGaAlP Quantum Well Structure with an N-type Well
Authors:	Chang, Yuni;Huang, Hsu-Ching;Kuo, Yen-Kuang
Contributors:	物理學系
Keywords:	InGaAlP;n-type well;Yellow-green LED;Numer ical simulation
Date:	2000
Issue Date:	2012-07-19T01:47:26Z
Abstract:	Optical character istics of the yellowish green InGaAlP semiconductor laser with an n-type well is numer ically studied with a commercial LASTIP simulation program. The result shows that an appropr iate n-type well can reduce the laser threshold current without an increase of the electr ic resistance and a change of the laser wavelength. The improvement in threshold current with an n-type well is in the range of 24% to 34% for a temperature r ange from 100 to 400 K when compared to the conventional laser diode.
Relation:	in the 2nd International Photonics Conference (IPC2000, National Chiao Tung University, Hsinchu, Taiwan), paper TH-S1-P003, Proc. IPC 2000: 494-496
Appears in Collections:	[Department of Physics] Proceedings

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