English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20200869      Online Users : 309
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12477

Title: Theoretical and Experimental Analysis on InAlGaAs/AlGaAs Active Region of 850-nm Vertical-Cavity Surface-Emitting Lasers
Authors: Chang, Yi-An;Chen, Jun-Rong;Kuo, Hao-Chung;Kuo, Yen-Kuang;Wang, Shing-Chung
Contributors: 物理學系
Date: 2006-01
Issue Date: 2012-07-19T01:47:28Z
Publisher: IEEE
Abstract: In this study, the gain-carrier characteristics of In0.02Ga0.98As and InAlGaAs quantum wells (QWs) of variant In and Al compositions with an emission wavelength of 838 nm are theoretically investigated. More compressive strain, caused by higher In and Al compositions in InAlGaAs QW, is found to provide higher material gain, lower transparency carrier concentration, and transparency radiative current density over the temperature range of 25-95�C. To improve the output characteristics and high-temperature performance of 850-nm vertical-cavity surface-emitting laser (VCSEL), In0.15Al0.08Ga0.77As/Al0.3Ga0.7As is utilized as the active region, and a high-bandgap 10-nm-thick Al0.75Ga0.25As electronic blocking layer is employed for the first time. The threshold current and slope efficiency of the VCSEL with Al0.75Ga0.25As at 25�C are 1.33 mA and 0.53 W/A, respectively. When this VCSEL is operated at an elevated temperature of 95�C, the increase in threshold current is less than 21% and the decrease in slope efficiency is approximately 24.5%. A modulation bandwidth of 9.2 GHz biased at 4 mA is demonstrated.
Relation: IEEE Journal of Lightwave Technology, 24(1): 536-543
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML380View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback