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题名: A Numerical Study on Characteristic Temperature of Short-cavity 1.3-μm AlGaInAs/InP MQW Lasers
作者: Hsieh, Shang-Wei;Kuo, Yen-Kuang
贡献者: 物理學系
日期: 2006-02
上传时间: 2012-07-19T01:47:29Z
出版者: SpringerLink
摘要: Optical properties of a 1.3-μm AlGaInAs/InP
strained multiple quantum-well structure with an AlInAs electron
stopper layer, which is located between the active region
and the p-type graded-index separate confinement heterostructure
layer, are studied numerically with a LASTIP simulation
program. Specifically, the effect of the electron stopper layer
on the characteristic temperature and the temperature dependence
of the slope efficiency are investigated. Various physical
parameters at different operating temperatures are adjusted so
that the threshold currents of the simulated laser structure can
be matched to the experimental results of an identical laser
structure fabricated by Selmic et al. The simulation results
suggest that, with the use of a p-type Al0.5In0.5As electron
stopper layer and a strain-compensated active region consisting
of Al0.175Ga0.095In0.73As (6 nm)/Al0.32Ga0.2In0.48As (10 nm),
a characteristic temperature as high as 108.7 K can be achieved
for a 250-μm-long AlGaInAs/InP laser.
關聯: Applied Physics A: Materials Science & Processing, 82(2): 287-292
显示于类别:[物理學系] 期刊論文

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