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题名: Experimental and Theoretical Analysis on Ultraviolet 370 nm AlGaInN Light-emitting Diodes
作者: Chang, Yi-An;Yen, Sheng-Horng;Wang, Te-Chung;Kuo, Hao-Chung;Kuo, Yen-Kuang;Lu, Tien-Chang;Wang, Shing-Chung
贡献者: 物理學系
日期: 2006-03
上传时间: 2012-07-19T01:47:32Z
出版者: IOP Publishing Ltd
摘要: An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19–21% and the AlGaInN QW number is in the range 5–7 by reducing the electron leakage current.
關聯: Semiconductor Science and Technology, 21(5): 598-603
显示于类别:[物理學系] 期刊論文


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