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|Title: ||Numerical Study on Optimization of Active Regions for 1.3 m AlGaInAs and InGaAsN Material Systems|
|Authors: ||Kuo, Yen-Kuang;Hsieh, Shang-Wei;Chen, Hsiu-Fen|
|Keywords: ||Semiconductor laser;AlGaInAs;InGaAsN;InGaAsP;Numerical simulation|
|Issue Date: ||2012-07-19T01:47:34Z
|Publisher: ||The Japan Society of Applied Physics|
|Abstract: ||The peak material gains of 1.3 mm semiconductor material systems are numerically studied with a LASTIP simulation|
program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85 C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0:36Ga0:64As0:99N0:01 (6 nm)/GaAs0:99N0:01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
|Relation: ||Japanese Journal of Applied Physics, 45(3A): 1588-1590|
|Appears in Collections:||[物理學系] 期刊論文|
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