National Changhua University of Education Institutional Repository : Item 987654321/12485
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24748724      Online Users : 44
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Numerical Study on Optimization of Active Regions for 1.3 m AlGaInAs and InGaAsN Material Systems
Authors: Kuo, Yen-Kuang;Hsieh, Shang-Wei;Chen, Hsiu-Fen
Contributors: 物理學系
Keywords: Semiconductor laser;AlGaInAs;InGaAsN;InGaAsP;Numerical simulation
Date: 2006-03
Issue Date: 2012-07-19T01:47:34Z
Publisher: The Japan Society of Applied Physics
Abstract: The peak material gains of 1.3 mm semiconductor material systems are numerically studied with a LASTIP simulation
program. Specifically, the optical properties of the AlGaInAs and InGaAsN material systems are investigated. Simulation results suggest that, using a p-type AlInAs electron stopper layer, improved temperature dependence of slope efficiency in the operating temperature range from 25 to 85 C can be obtained for a ridge-waveguide AlGaInAs/InP laser structure. On the other hand, using a strain-compensated active region consisting of In0:36Ga0:64As0:99N0:01 (6 nm)/GaAs0:99N0:01 (10 nm), a high laser performance and stimulated emission characteristics can be achieved for a ridge-waveguide InGaAsN/GaAs laser structure.
Relation: Japanese Journal of Applied Physics, 45(3A): 1588-1590
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback