English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20122052      Online Users : 192
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12487

Title: Optical Gain and Threshold Properties of Strained InGaAlAs/AlGaAs Quantum Wells for 850-nm Vertical-cavity Surface-emitting Lasers
Authors: Chen, Jun-Rong;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: Semiconductor lasers;Optical properties;III–V semiconductors;Numerical simulation
Date: 2006-08
Issue Date: 2012-07-19T01:47:37Z
Publisher: Elsevier
Abstract: The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin–orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.
Relation: Optics Communications, 264(1): 213-218
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML379View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback