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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12492

Title: Effect of Band-offset Ratio on Characteristics of Blue InGaN Quantum-well Lasers
Authors: Liou, Bo-Ting;Yen, Sheng-Horng;Lin, Cheng-Yang;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: InGaN;Band-offset ratio;Quantum-well laser;Threshold current
Date: 2006-09
Issue Date: 2012-07-19T01:47:42Z
Publisher: 修平技術學院
Abstract: The effect of the band-offset ratio on the characteristics of the blue InGaN quantum-well lasers is studied numerically. Specifically, the optical properties are investigated when the band-off ratio of the InxGa1-xN/InyGa1-yN heterojunction is 7/3. Simulation results indicate that the laser performance is better for a blue laser diode with a band-offset ratio of 7/3 than for one with a band-offset ratio of 3/7. Moreover, the problem of non-uniform hole distribution in the blue InGaN quantum-well lasers becomes less severe, and the non-uniform electron distribution becomes more obvious when the band-offset ratio is changed from 3/7 to 7/3. The lowest threshold current is obtained when the number of InGaN well layers is one when the band-offset ratio is 7/3.
Relation: 修平學報, 13: 297-310
Appears in Collections:[物理學系] 期刊論文

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