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題名: 載子阻礙層對氮砷化銦鎵雷射之影響
Numerical Analysis of InGaAsN Quantum-Well Lasers with Carrier-blocking Layer
作者: 陳秀芬;謝尚衛;郭艷光
貢獻者: 物理學系
關鍵詞: 氮砷化銦鎵;雷射二極體;數值模擬
InGaAsN;Quantum-well lasers;Numerical simulation
日期: 2006-09
上傳時間: 2012-07-19T01:47:54Z
出版者: 中華民國光學工程學會
摘要: 過去在商業應用上,中長程光纖通訊的光源材料廣泛地採用InGaAsP系統,但此材料系統對熱的敏感度不低,使得元件在操作時必須有散熱裝置,增加了封裝時的製作成本。近年來,新竄起的InGaAsN與AlGaInAs兩種材料被發現具有更多的優點,引起學術界許多研究群的注意,而其中InGaAsN以具有相當大的導電帶能隙差與相當高的特性溫度取勝,再加上其基板為價格便宜的GaAs,能夠降低成本,發展前景相當看好。本文探討GaAs0.85P0.15載子阻礙層對元件特性的影響,分別對具有一般披覆層與漸變式披覆層的兩種結構做分析,從各種特性分析載子阻礙層對元件造成的影響。另外也嘗試了將GaAs0.85P0.15電洞阻礙層的材料換成晶格匹配的AlGaAs,藉由變化阻礙層中的Al含量來調整其位能高度,探討此種電洞阻礙層對具有一般披覆層的結構之影響,並找出AlGaAs電洞阻礙層的最佳成分。
The InGaAsP system is widely used in the optical communication applications. However, the thermal effect of InGaAsP system is a serious problem, which results in the need of cooling unit that increases the cost of packaged lasers. In the past few years, the InGaAsN and AlGaInAs were found to have more advantages than the traditional InGaAsP material system. The InGaAsN system, which has a large conduction band offset and a high characteristic temperature, attracts much interest. In addition to the excellent performance at high temperature, the InGaAsN can be grown on a low-cost GaAs substrate that leads to the feasibility of commercial mass production. In this article, we study the effects of GaAs0.85P0.15 carrier-blocking layer upon InGaAsN edge-emitting lasers. Two kinds of laser structures that have different cladding layers are investigated in this paper. Moreover, we change the material of the hole-blocking layer from GaAs0.85P0.15 to AlGaAs and vary the aluminum composition in hole-blocking layer. Finally, the aluminum composition in the carrier-blocking layer is optimized.
關聯: 光學工程, 95: 66-75
顯示於類別:[物理學系] 期刊論文


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