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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12502

Title: Abnormal Blue Shift of InGaN Micro-size Light Emitting Diodes
Authors: Pong, Bao-Jen;Chen, Chi-Hsing;Yen, Sheng-Horng;Hsu, Jin-Fu;Tun, Chun-Ju;Kuo, Yen-Kuang;Kuo, Cheng-Huang;Chi, Gou-Chung
Contributors: 物理學系
Keywords: InGaN;Micro-size;Light emitting diodes;Ion implantation;Electro-ridge;APSYS;Simulation;Band filling effect;Lateral carrier confinement
Date: 2006-10
Issue Date: 2012-07-19T01:47:56Z
Publisher: Elsevier
Abstract: Blue InGaN micro-size light emitting diodes (LEDs) with diameters from 3 to 70 μm have been fabricated. An ion implantation technique and a 12 μm electro-ridge were used to simplify the fabrication processes. The 3–70 μm LEDs exhibiting a large emission of photon blue shift (40–240 meV) were observed in electro-luminescence (EL) spectra. The dependence of the blue shift on size is studied. The characteristics of the micro-size LEDs are also investigated numerically with the use of an advanced physical model of semiconductor devices (APSYS). The experimental measurements and simulation results are in close agreement for maximum blue shift. Base on the simulation, the difference between blue shift caused by band filling effect and red shift caused by lateral carrier confinement are approximately the same. Hence, the maximum blue shift increases when the size of micro-size LED increases because of decreased red shift resulted from thermal effect.
Relation: Solid-State Electronics, 50(9-10): 1588-1594
Appears in Collections:[物理學系] 期刊論文

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