National Changhua University of Education Institutional Repository : Item 987654321/12502
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 24928828      在线人数 : 71
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12502

题名: Abnormal Blue Shift of InGaN Micro-size Light Emitting Diodes
作者: Pong, Bao-Jen;Chen, Chi-Hsing;Yen, Sheng-Horng;Hsu, Jin-Fu;Tun, Chun-Ju;Kuo, Yen-Kuang;Kuo, Cheng-Huang;Chi, Gou-Chung
贡献者: 物理學系
关键词: InGaN;Micro-size;Light emitting diodes;Ion implantation;Electro-ridge;APSYS;Simulation;Band filling effect;Lateral carrier confinement
日期: 2006-10
上传时间: 2012-07-19T01:47:56Z
出版者: Elsevier
摘要: Blue InGaN micro-size light emitting diodes (LEDs) with diameters from 3 to 70 μm have been fabricated. An ion implantation technique and a 12 μm electro-ridge were used to simplify the fabrication processes. The 3–70 μm LEDs exhibiting a large emission of photon blue shift (40–240 meV) were observed in electro-luminescence (EL) spectra. The dependence of the blue shift on size is studied. The characteristics of the micro-size LEDs are also investigated numerically with the use of an advanced physical model of semiconductor devices (APSYS). The experimental measurements and simulation results are in close agreement for maximum blue shift. Base on the simulation, the difference between blue shift caused by band filling effect and red shift caused by lateral carrier confinement are approximately the same. Hence, the maximum blue shift increases when the size of micro-size LED increases because of decreased red shift resulted from thermal effect.
關聯: Solid-State Electronics, 50(9-10): 1588-1594
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML694检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈