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NCUEIR > College of Science > Department of Physics > Proceedings > Item 987654321/12503

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Title:	以砷化銦鎵做活性層對850 nm面射型半導體雷射性能的影響
Authors:	張郁妮;郭艷光;黃滿芳
Contributors:	物理學系
Keywords:	面射型雷射;VCSEL;AlGaAs;InGaAs;活性層;量子井;DBR
Date:	2001
Issue Date:	2012-07-19T01:47:59Z
Abstract:	本文主要是以數值模擬的方式，來探討以In0.1Ga0.9As/Al0.35Ga0.65As做為850 nm面射型半導體雷射(VCSEL)的活性層對雷射性能的影響，我們使用相同材料的DBR及spacer，單純比較In0.1Ga0.9As/Al0.35Ga0.65As與GaAs/Al0.35Ga0.65As這兩種不同活性層與雷射性能間的關係，結果發現以In0.1Ga0.9As/Al0.35Ga0.65As做為活性層的雷射性能明顯優於傳統以GaAs/Al0.35Ga0.65As做為活性層的雷射。
Relation:	2001年台灣光電科技研討會, paper P28, OPT’01 Proceedings: 956-958
Appears in Collections:	[Department of Physics] Proceedings

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