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Title: 氮化銦鎵多量子井結構之電洞不均勻性探討
Authors: 張誌原;郭艷光
Contributors: 物理學系
Keywords: 氮化銦鎵;多量子井;電子溢流;電洞不均勻性
Date: 2001
Issue Date: 2012-07-19T01:48:02Z
Abstract: 本篇論文利用Lastip模擬軟體來探討氮化銦鎵多量子井元件在活性區附近之電洞分佈不均勻現象。結果發現在一般的三量子井結構中,確實存在著嚴重的電洞不均勻現象;在此一結果的影響下,單一量子井雷射的效能優於多量子井結構之效能。為了改善此一現象,我們試著將量子井旁的barrier層進行電洞摻雜,結果發現此一方式不只改善了電洞分佈不均勻的問題,並且有效的促進了元件的雷射效能。
Relation: 2001年台灣光電科技研討會, paper P3, OPT’01 Proceedings: 872-875
Appears in Collections:[Department of Physics] Proceedings

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