English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28651860      Online Users : 672
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12506

Title: Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well Laser Diodes
Authors: Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang
Contributors: 物理學系
Keywords: III–V semiconductors;Numerical simulation;Optical properties;Semiconductor lasers
Date: 2006-12
Issue Date: 2012-07-19T01:48:02Z
Publisher: SpringerLink
Abstract: Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are
numerically studied with a self-consistent simulation program. Specifically, the performance of the laser
diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated
and compared. The simulation results indicate that the double-quantum-well laser structure with
a peak emission wavelength of 385–410nm has the lowest threshold current. The characteristic temperature
of the single-quantum-well laser structure increases as the peak emission wavelength increases. The
triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength
is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic
temperature when the peak emission wavelength is larger than 405 nm.
Relation: Optical and Quantum Electronics, 38(12-14): 1029-1037
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback