Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12506
|
| Title: | Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well Laser Diodes |
| Authors: | Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang |
| Contributors: | 物理學系 |
| Keywords: | III–V semiconductors;Numerical simulation;Optical properties;Semiconductor lasers |
| Date: | 2006-12
|
| Issue Date: | 2012-07-19T01:48:02Z
|
| Publisher: | SpringerLink |
| Abstract: | Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are
numerically studied with a self-consistent simulation program. Specifically, the performance of the laser
diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated
and compared. The simulation results indicate that the double-quantum-well laser structure with
a peak emission wavelength of 385–410nm has the lowest threshold current. The characteristic temperature
of the single-quantum-well laser structure increases as the peak emission wavelength increases. The
triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength
is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic
temperature when the peak emission wavelength is larger than 405 nm. |
| Relation: | Optical and Quantum Electronics, 38(12-14): 1029-1037 |
| Appears in Collections: | [物理學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 544 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
