National Changhua University of Education Institutional Repository : Item 987654321/12506

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12506

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12506

Title:	Simulation of InGaN Violet and Ultraviolet Multiple-quantum-well Laser Diodes
Authors:	Yen, Sheng-Horng;Chen, Bo-Jean;Kuo, Yen-Kuang
Contributors:	物理學系
Keywords:	III–V semiconductors;Numerical simulation;Optical properties;Semiconductor lasers
Date:	2006-12
Issue Date:	2012-07-19T01:48:02Z
Publisher:	SpringerLink
Abstract:	Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410 nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385–410nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405 nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405 nm.
Relation:	Optical and Quantum Electronics, 38(12-14): 1029-1037
Appears in Collections:	[Department of Physics] Periodical Articles

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