National Changhua University of Education Institutional Repository : Item 987654321/12507

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12507

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12507

Title:	Numerical Study on Strained InGaAsP/InGaP Quantum Wells for 850-nm Vertical-cavity Surface-emitting Lasers
Authors:	Kuo, Yen-Kuang;Chen, Jun-Rong;Chen, Mei-Ling;Liou, Bo-Ting
Contributors:	物理學系
Date:	2007-02
Issue Date:	2012-07-19T01:48:03Z
Publisher:	SpringerLink
Abstract:	The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing a compressive strain of approximately 1.24%in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP verticalcavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.
Relation:	Applied Physics B: Lasers and Optics, 86(4): 623-631
Appears in Collections:	[Department of Physics] Periodical Articles

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