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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12509

Title: Numerical Study on Gain and Optical Properties of AlGaInAs, InGaNAs, and InGaAsP Material Systems for 1.3-μm Semiconductor Lasers
Authors: Kuo, Yen-Kuang;Yen, Sheng-Horng;Yao, Ming-Wei;Chen, Mei-Ling;Liou, Bo-Ting
Contributors: 物理學系
Keywords: Semiconductor lasers;AlGaInAs;InGaNAs;InGaAsP;Numerical simulation
Date: 2007-07
Issue Date: 2012-07-19T01:48:06Z
Publisher: Elsevier
Abstract: In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290–330 K and 330–350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.
Relation: Optics Communications, 275(1): 156-164
Appears in Collections:[物理學系] 期刊論文

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