National Changhua University of Education Institutional Repository : Item 987654321/12512
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题名: Investigation of Violet InGaN Laser Diodes with Normal and Reversed Polarizations
作者: Yen, Sheng-Horng;Kuo, Yen-Kuang;Tsai, Meng-Lun;Hsu, Ta-Cheng
贡献者: 物理學系
日期: 2007-11
上传时间: 2012-07-19T01:48:09Z
出版者: American Institute of Physics
摘要: The polarity is a special property for III-nitride materials with wurtzite structure along different orientations. The influence of normal and reversed polarizations on laser performance of the violet laser diodes with Ga-face and N-face configurations is studied numerically. Specifically, the laser performance, band diagram, carrier confinement, and emission wavelength are investigated. The results show that the threshold current is improved and emission wavelength is redshifted when the laser diode is with reversed polarization.
關聯: Applied Physics Letters, 91(20): 201118-1 – 201118-3
显示于类别:[物理學系] 期刊論文

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