National Changhua University of Education Institutional Repository : Item 987654321/12517
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29944291      在线人数 : 471
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12517

题名: Electronic Current Overflow and Inhomogeneous Hole Distribution of InGaN Quantum Well Structures
作者: Chang, Jih-Yuan;Kuo, Yen-Kuang
贡献者: 物理學系
日期: 2002-09
上传时间: 2012-07-19T01:48:15Z
出版者: SPIE
摘要: The InGaN semiconductor materials have important application in visible light-emitting diodes (LED) and short-wavelength laser diodes. In this work we investigate the electronic current overflow and the inhomogeneous hole distribution of the blue InGaN quantum well structures with a LASTIP (abbreviation of LASer Technology Integrated Program) simulation program. The simulation results show that the InGaN quantum well structure has an appreciable electronic current overflow at room temperature. The electronic current overflow problem becomes even more severe at elevated temperatures, which not only affects the emission efficiency of the quantum well structure, but also deteriorates the operation lifetime of the InGaN optical devices. The simulation results indicate that it is possible to improve the electronic current overflow by increasing the doping level of the p-type epi-layers and adding an AlGaN blocking layer in the p-type region. On the other hand, our numerical simulation also shows that, in addition to the electronic current overflow issue, the distribution of the holes in the InGaN active region is very inhomogeneous. It turns out that the laser performance of a single quantum well InGaN laser is better than that of the multiple quantum well lasers. According to our studies, if the barriers between the quantum wells are properly doped, the inhomogeneous hole distribution in the active region may be improved and hence the laser performance of the multiple quantum well InGaN lasers may be enhanced.
關聯: Proceedings of SPIE, 4913: 115-125 (Semiconductor Lasers and Applications)
显示于类别:[物理學系] 會議論文

文件中的档案:

档案 大小格式浏览次数
2020200616014.pdf7KbAdobe PDF482检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈