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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12519
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| Title: | Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs |
| Authors: | Chen, Jun-Rong;Ko, Tsung-Shine;Lu, Tien-Chang;Chang, Yi-An;Kuo, Hao-Chung;Kuo, Yen-Kuang;Tsai, Jui-Yen;Laih, Li-Wen;Wang, Shing-Chung |
| Contributors: | 物理學系 |
| Date: | 2008-07
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| Issue Date: | 2012-07-19T01:48:18Z
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| Publisher: | IEEE |
| Abstract: | InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3λ) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95 °C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs. |
| Relation: | IEEE Journal of Lightwave Technology, 26(13): 1891-1900 |
| Appears in Collections: | [物理學系] 期刊論文
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