資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/12519
|
題名: | Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs |
作者: | Chen, Jun-Rong;Ko, Tsung-Shine;Lu, Tien-Chang;Chang, Yi-An;Kuo, Hao-Chung;Kuo, Yen-Kuang;Tsai, Jui-Yen;Laih, Li-Wen;Wang, Shing-Chung |
貢獻者: | 物理學系 |
日期: | 2008-07
|
上傳時間: | 2012-07-19T01:48:18Z
|
出版者: | IEEE |
摘要: | InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3λ) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95 °C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs. |
關聯: | IEEE Journal of Lightwave Technology, 26(13): 1891-1900 |
顯示於類別: | [物理學系] 期刊論文
|
文件中的檔案:
檔案 |
大小 | 格式 | 瀏覽次數 |
index.html | 0Kb | HTML | 667 | 檢視/開啟 |
|
在NCUEIR中所有的資料項目都受到原著作權保護.
|