National Changhua University of Education Institutional Repository : Item 987654321/12521
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题名: Improvement in Piezoelectric Effect of Violet InGaN Laser Diodes
作者: Yen, Sheng-Horng;Kuo, Yen-Kuang
贡献者: 物理學系
关键词: Numerical simulation;Semiconductor lasers;Laser materials
日期: 2008-09
上传时间: 2012-07-19T01:48:21Z
出版者: Elsevier
摘要: The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)–In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)–In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.
關聯: Optics Communications, 281(18): 4735-4740
显示于类别:[物理學系] 期刊論文

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