National Changhua University of Education Institutional Repository : Item 987654321/12522

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12522

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12522

Title:	Numerical Study on InGaAsN/GaAs Multiple-quantum-well Laser with GaAsP and GaAsN Barriers
Authors:	Kuo, Yen-Kuang;Yen, S. H.;Yao, M. W.;Tsai, M. C.;Chen, M. L.;Liou, B. T.
Contributors:	物理學系
Date:	2008-09
Issue Date:	2012-07-19T01:48:23Z
Publisher:	SpringerLink
Abstract:	In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5, to find appropriate barrier material for InGaAsN laser structures. The simulation results show that InGaAsN laser structure has higher characteristic temperature regardless of what quantum-well number is if the indirect-GaAsP barrier is utilized. Furthermore, for InGaAsN laser structure, the usage of indirect-GaAsP barrier is beneficial for reducing the threshold current when the quantum-well number is from 1 to 2 and the usage of direct-GaAsN barrier is beneficial for reducing the threshold current when the quantum-well number is from 3 to 5.
Relation:	Applied Physics B: Lasers and Optics, 93(2-3): 497-506
Appears in Collections:	[Department of Physics] Periodical Articles

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