National Changhua University of Education Institutional Repository : Item 987654321/12522
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29930016      在线人数 : 497
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12522

题名: Numerical Study on InGaAsN/GaAs Multiple-quantum-well Laser with GaAsP and GaAsN Barriers
作者: Kuo, Yen-Kuang;Yen, S. H.;Yao, M. W.;Tsai, M. C.;Chen, M. L.;Liou, B. T.
贡献者: 物理學系
日期: 2008-09
上传时间: 2012-07-19T01:48:23Z
出版者: SpringerLink
摘要: In this work, the multiple-quantum-well InGaAsN
laser structures with indirect-GaAsP and direct-GaAsN barriers
are investigated by using LASTIP simulation program.
We vary the quantum-well number, from 1 to 5, to find
appropriate barrier material for InGaAsN laser structures.
The simulation results show that InGaAsN laser structure
has higher characteristic temperature regardless of what
quantum-well number is if the indirect-GaAsP barrier is
utilized. Furthermore, for InGaAsN laser structure, the usage
of indirect-GaAsP barrier is beneficial for reducing the
threshold current when the quantum-well number is from
1 to 2 and the usage of direct-GaAsN barrier is beneficial
for reducing the threshold current when the quantum-well
number is from 3 to 5.
關聯: Applied Physics B: Lasers and Optics, 93(2-3): 497-506
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML716检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈