English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20703963      Online Users : 57
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12523

Title: Numerical Study on Optical Properties of InGaN Multi-quantum-well Laser Diodes with Polarization-matched AlInGaN Barrier Layers
Authors: Chen, J. R.;Ling, S. C.;Huang, H. M.;Su, P. Y.;Ko, T. S.;Lu, T. C.;Kuo, H. C.;Kuo, Yen-Kuang;Wang, S. C.
Contributors: 物理學系
Date: 2008-12
Issue Date: 2012-07-19T01:48:24Z
Publisher: SpringerLink
Abstract: The optical properties of InGaN multi-quantumwell
laser diodes with different polarization-matched AlIn-
GaN barrier layers have been investigated numerically by
employing an advanced device simulation program. The use
of quaternary polarization-matched AlInGaN barrier layers
enhances the electron–hole wave function overlap due to
the compensation of polarization charges between InGaN
quantum well and AlInGaN barrier layer. According to the
simulation results, it is found that, among the polarizationmatched
quantum-well structures under study, lower threshold
current and higher slope efficiency can be achieved simultaneously
when the aluminum composition in AlInGaN
barrier layers is about 10–15%. The optimal polarizationmatched
InGaN/AlInGaN laser diode shows lower threshold
current and higher slope efficiency compared to conventional
InGaN/InGaN laser diodes.
Relation: Applied Physics B: Lasers and Optics, 95(1): 145-153
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML514View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback