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| 題名: | Numerical Study on Optical Properties of InGaN Multi-quantum-well Laser Diodes with Polarization-matched AlInGaN Barrier Layers |
| 作者: | Chen, J. R.;Ling, S. C.;Huang, H. M.;Su, P. Y.;Ko, T. S.;Lu, T. C.;Kuo, H. C.;Kuo, Yen-Kuang;Wang, S. C. |
| 貢獻者: | 物理學系 |
| 日期: | 2008-12
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| 上傳時間: | 2012-07-19T01:48:24Z
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| 出版者: | SpringerLink |
| 摘要: | The optical properties of InGaN multi-quantumwell
laser diodes with different polarization-matched AlIn-
GaN barrier layers have been investigated numerically by
employing an advanced device simulation program. The use
of quaternary polarization-matched AlInGaN barrier layers
enhances the electron–hole wave function overlap due to
the compensation of polarization charges between InGaN
quantum well and AlInGaN barrier layer. According to the
simulation results, it is found that, among the polarizationmatched
quantum-well structures under study, lower threshold
current and higher slope efficiency can be achieved simultaneously
when the aluminum composition in AlInGaN
barrier layers is about 10–15%. The optimal polarizationmatched
InGaN/AlInGaN laser diode shows lower threshold
current and higher slope efficiency compared to conventional
InGaN/InGaN laser diodes. |
| 關聯: | Applied Physics B: Lasers and Optics, 95(1): 145-153 |
| 顯示於類別: | [物理學系] 期刊論文
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