National Changhua University of Education Institutional Repository : Item 987654321/12523

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12523

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12523

Title:	Numerical Study on Optical Properties of InGaN Multi-quantum-well Laser Diodes with Polarization-matched AlInGaN Barrier Layers
Authors:	Chen, J. R.;Ling, S. C.;Huang, H. M.;Su, P. Y.;Ko, T. S.;Lu, T. C.;Kuo, H. C.;Kuo, Yen-Kuang;Wang, S. C.
Contributors:	物理學系
Date:	2008-12
Issue Date:	2012-07-19T01:48:24Z
Publisher:	SpringerLink
Abstract:	The optical properties of InGaN multi-quantumwell laser diodes with different polarization-matched AlIn- GaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarizationmatched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarizationmatched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.
Relation:	Applied Physics B: Lasers and Optics, 95(1): 145-153
Appears in Collections:	[Department of Physics] Periodical Articles

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