English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 25173115      Online Users : 81
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12527

Title: Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
Authors: Chen, Jun-Rong;Wu, Yung-Chi;Lu, Tien-Chang;Kuo, Hao-Chung;Kuo, Yen-Kuang;Wang, Shing-Chung
Contributors: 物理學系
Keywords: Semiconductor lasers;Optical properties;III–V semiconductors;Numerical simulation
Date: 2009-06
Issue Date: 2012-07-19T01:48:29Z
Publisher: The Optical Society of Japan
Abstract: Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to
investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including
temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and
gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of
different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show
that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is
found that the different values of the ridge height cause the lateral carrier distribution within the active region to be
varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the
geometry-dependent waveguide cutoff condition.
Relation: Optical Review, 16(3): 375-382
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback