National Changhua University of Education Institutional Repository : Item 987654321/12527
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题名: Numerical Study on Lateral Mode Behavior of 660-nm InGaP/AlGaInP Multiple-Quantum-Well Laser Diodes
作者: Chen, Jun-Rong;Wu, Yung-Chi;Lu, Tien-Chang;Kuo, Hao-Chung;Kuo, Yen-Kuang;Wang, Shing-Chung
贡献者: 物理學系
关键词: Semiconductor lasers;Optical properties;III–V semiconductors;Numerical simulation
日期: 2009-06
上传时间: 2012-07-19T01:48:29Z
出版者: The Optical Society of Japan
摘要: Theoretical analysis for InGaP/AlGaInP laser diodes with different ridge waveguide structures is performed to
investigate the lateral mode behavior using advanced device simulation. The internal physical mechanisms including
temperature-induced changes in the refractive index profile, spatial hole burning effect, lateral carrier distribution, and
gain profile variation with increasing input current are discussed by theoretical calculation to analyze the effects of
different ridge structures on the lateral mode behavior of 660-nm AlGaInP laser diodes. The simulation results show
that the use of narrow and shallow ridge geometry is the approach to obtaining single mode operation. Furthermore, it is
found that the different values of the ridge height cause the lateral carrier distribution within the active region to be
varied, which is also an important factor in determining the emergence of the first order lateral mode in addition to the
geometry-dependent waveguide cutoff condition.
關聯: Optical Review, 16(3): 375-382
显示于类别:[物理學系] 期刊論文

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