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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12528

Title: Advantages of Blue InGaN Multiple-quantum Well Light-emitting Diodes with InGaN Barriers
Authors: Kuo, Yen-Kuang;Chang, Jih-Yuan;Tsai, Miao-Chan;Yen, Sheng-Horng
Contributors: 物理學系
Date: 2009-07
Issue Date: 2012-07-19T01:48:31Z
Publisher: American Institute of Physics
Abstract: The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.
Relation: Applied Physics Letters, 95(1): 011116-1 – 011116-3
Appears in Collections:[物理學系] 期刊論文

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