National Changhua University of Education Institutional Repository : Item 987654321/12528

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29916390 Online Users : 363

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12528

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12528

Title:	Advantages of Blue InGaN Multiple-quantum Well Light-emitting Diodes with InGaN Barriers
Authors:	Kuo, Yen-Kuang;Chang, Jih-Yuan;Tsai, Miao-Chan;Yen, Sheng-Horng
Contributors:	物理學系
Date:	2009-07
Issue Date:	2012-07-19T01:48:31Z
Publisher:	American Institute of Physics
Abstract:	The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.
Relation:	Applied Physics Letters, 95(1): 011116-1 – 011116-3
Appears in Collections:	[Department of Physics] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	733	View/Open