National Changhua University of Education Institutional Repository : Item 987654321/12528
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 23792712      在线人数 : 134
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12528

题名: Advantages of Blue InGaN Multiple-quantum Well Light-emitting Diodes with InGaN Barriers
作者: Kuo, Yen-Kuang;Chang, Jih-Yuan;Tsai, Miao-Chan;Yen, Sheng-Horng
贡献者: 物理學系
日期: 2009-07
上传时间: 2012-07-19T01:48:31Z
出版者: American Institute of Physics
摘要: The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.
關聯: Applied Physics Letters, 95(1): 011116-1 – 011116-3
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML587检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈