National Changhua University of Education Institutional Repository : Item 987654321/12529
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 24893303      在线人数 : 57
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes
作者: Yen, Sheng-Horng;Tsai, Miao-Chan;Tsai, Meng-Lun;Shen, Yu-Jiun;Hsu, Ta-Cheng;Kuo, Yen-Kuang
贡献者: 物理學系
日期: 2009-07
上传时间: 2012-07-19T01:48:33Z
出版者: IEEE
摘要: The effect of an n-type AlGaN layer on the physical properties of blue InGaN light-emitting diodes (LEDs) is investigated numerically. The p-type AlGaN electron-blocking layer is usually used in blue LEDs to reduce the electron leakage current. However, the p-type AlGaN layer also retards the injection of holes, which leads to the degradation of efficiency at high current. To improve the efficiency droop of blue InGaN LEDs at high current, an n-type AlGaN layer below the active region is proposed to replace the traditional p-type AlGaN layer. The simulation results show that the improvement in efficiency droop is due mainly to the sufficiently reduced electron leakage current and more uniform distribution of holes in the quantum wells.
關聯: IEEE Photonics Technology Letters, 21(14): 975-977
显示于类别:[物理學系] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈