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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12532

Title: Numerical Simulation of Blue InGaN Light-emitting Diodes with Polarization-matched AlGaInN Electron-blocking Layer and Barrier Layer
Authors: Kuo, Yen-Kuang;Tsai, Miao-Chan;Yen, Sheng-Horng
Contributors: 物理學系
Keywords: Light-emitting diode;Piezoelectric effect;Numerical simulation
Date: 2009-11
Issue Date: 2012-07-19T01:48:39Z
Publisher: Elsevier
Abstract: The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.
Relation: Optics Communications, 282(21): 4252-4255
Appears in Collections:[物理學系] 期刊論文

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