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http://ir.ncue.edu.tw/ir/handle/987654321/12532
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題名: | Numerical Simulation of Blue InGaN Light-emitting Diodes with Polarization-matched AlGaInN Electron-blocking Layer and Barrier Layer |
作者: | Kuo, Yen-Kuang;Tsai, Miao-Chan;Yen, Sheng-Horng |
貢獻者: | 物理學系 |
關鍵詞: | Light-emitting diode;Piezoelectric effect;Numerical simulation |
日期: | 2009-11
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上傳時間: | 2012-07-19T01:48:39Z
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出版者: | Elsevier |
摘要: | The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range. |
關聯: | Optics Communications, 282(21): 4252-4255 |
顯示於類別: | [物理學系] 期刊論文
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