National Changhua University of Education Institutional Repository : Item 987654321/12532

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29952158 Online Users : 602

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12532

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12532

Title:	Numerical Simulation of Blue InGaN Light-emitting Diodes with Polarization-matched AlGaInN Electron-blocking Layer and Barrier Layer
Authors:	Kuo, Yen-Kuang;Tsai, Miao-Chan;Yen, Sheng-Horng
Contributors:	物理學系
Keywords:	Light-emitting diode;Piezoelectric effect;Numerical simulation
Date:	2009-11
Issue Date:	2012-07-19T01:48:39Z
Publisher:	Elsevier
Abstract:	The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.
Relation:	Optics Communications, 282(21): 4252-4255
Appears in Collections:	[Department of Physics] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	627	View/Open