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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/12534
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| Title: | Investigation of Wavelength-dependent Efficiency Droop in InGaN Light-emitting Diodes |
| Authors: | Chen, J. R.;Wu, Y. C.;Ling, S. C.;Ko, T. S.;Lu, T. C.;Kuo, H. C.;Kuo, Yen-Kuang;Wang, S. C. |
| Contributors: | 物理學系 |
| Date: | 2010
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| Issue Date: | 2012-07-19T01:48:40Z
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| Publisher: | SpringerLink |
| Abstract: | The physical mechanisms leading to the efficiency
droop of InGaN/GaN light-emitting diodes (LEDs)
are theoretically investigated. We first discuss the effect of
Auger recombination loss on efficiency droop by taking different
Auger coefficients into account. It is found that the
Auger recombination process plays a significant nonradiative
part for carriers at typical LED operation currents when
the Auger coefficient is on the order of 10−30 cm6 s−1. Furthermore,
the InGaN/GaN multiple-quantum-well (MQW)
LEDs with varied indium compositions in InGaN quantum
wells are studied to analyze the wavelength-dependent
efficiency droop. The simulation results show that the
wavelength-dependent efficiency droop is caused by several
different effects including non-uniform carrier distribution,
electron overflow, built-in electrostatic field induced
by spontaneous and piezoelectric polarization, and Auger
recombination loss. These internal physical mechanisms are
the critical factors resulting in the wavelength-dependent efficiency
droop in InGaN/GaN MQW LEDs. |
| Relation: | Applied Physics B: Lasers and Optics, 98(4): 779-789 |
| Appears in Collections: | [物理學系] 期刊論文
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