National Changhua University of Education Institutional Repository : Item 987654321/12534
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29954860      在线人数 : 543
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12534

题名: Investigation of Wavelength-dependent Efficiency Droop in InGaN Light-emitting Diodes
作者: Chen, J. R.;Wu, Y. C.;Ling, S. C.;Ko, T. S.;Lu, T. C.;Kuo, H. C.;Kuo, Yen-Kuang;Wang, S. C.
贡献者: 物理學系
日期: 2010
上传时间: 2012-07-19T01:48:40Z
出版者: SpringerLink
摘要: The physical mechanisms leading to the efficiency
droop of InGaN/GaN light-emitting diodes (LEDs)
are theoretically investigated. We first discuss the effect of
Auger recombination loss on efficiency droop by taking different
Auger coefficients into account. It is found that the
Auger recombination process plays a significant nonradiative
part for carriers at typical LED operation currents when
the Auger coefficient is on the order of 10−30 cm6 s−1. Furthermore,
the InGaN/GaN multiple-quantum-well (MQW)
LEDs with varied indium compositions in InGaN quantum
wells are studied to analyze the wavelength-dependent
efficiency droop. The simulation results show that the
wavelength-dependent efficiency droop is caused by several
different effects including non-uniform carrier distribution,
electron overflow, built-in electrostatic field induced
by spontaneous and piezoelectric polarization, and Auger
recombination loss. These internal physical mechanisms are
the critical factors resulting in the wavelength-dependent efficiency
droop in InGaN/GaN MQW LEDs.
關聯: Applied Physics B: Lasers and Optics, 98(4): 779-789
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML748检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈