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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12535

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12535

Title:	Effect of Polarization State on Optical Properties of Blue-violet InGaN Light-emitting Diodes
Authors:	Kuo, Yen-Kuang;Horng, Syuan-Huei;Yen, Sheng-Horng;Tsai, Miao-Chan;Huang, Man-Fang
Contributors:	物理學系
Date:	2010
Issue Date:	2012-07-19T01:48:42Z
Publisher:	SpringerLink
Abstract:	The optical properties of blue-violet InGaN lightemitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turnon voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.
Relation:	Applied Physics A: Materials Science & Processing, 98(3): 509-515
Appears in Collections:	[Department of Physics] Periodical Articles

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