National Changhua University of Education Institutional Repository : Item 987654321/12536
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29718824      線上人數 : 435
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12536

題名: Carrier Transportation and Internal Quantum Efficiency of Blue InGaN Light-Emitting Diodes With P-Doped Barriers
作者: Tsai, Miao-Chan;Yen, Sheng-Horng;Kuo, Yen-Kuang
貢獻者: 物理學系
日期: 2010-03
上傳時間: 2012-07-19T01:48:44Z
出版者: IEEE
摘要: In this letter, the situation when the barriers are partially p-doped in selected regions is considered in order to avoid the diffusion of Mg into the quantum well during crystal growth. Moreover, to increase the hole injection and improve the carrier distribution across the multiple quantum wells, the three barriers near the p-layers are p-doped with a gradually increased doping concentration in a blue InGaN light-emitting diode. According to the simulation results, when the stepwise p-doping profile is used in the selected barrier regions, the output power and internal quantum efficiency markedly improve due to the increased hole injection efficiency and decreased electron leakage.
關聯: IEEE Photonics Technology Letters, 22(6): 374-376
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML667檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋