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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12537

Title: Advantages of Blue InGaN Light-emitting Diodes with AlGaN Barriers
Authors: Chang, Jih-Yuan;Tsai, Miao-Chan;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2010-05
Issue Date: 2012-07-19T01:48:45Z
Publisher: Optical Society of America
Abstract: The advantages of blue InGaN light-emitting diodes (LEDs) with AlGaN barriers are studied numerically. The performance curves, energy band diagrams, electrostatic fields, and carrier concentrations are investigated. The simulation results show that the InGaN∕AlGaN LED has better performance than its conventional InGaN∕GaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by AlGaN barriers.
Relation: Optics Letters, 35(9): 1368-1370
Appears in Collections:[物理學系] 期刊論文

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