National Changhua University of Education Institutional Repository : Item 987654321/12539
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 25195738      在线人数 : 69
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12539

题名: Characteristics of 850-nm InGaAs/AlGaAs Vertical-cavity Surface-emitting Lasers
作者: Chang, Yuni;Kuo, Yen-Kuang;Huang, Man-Fang
贡献者: 物理學系
关键词: Semiconductor laser;VCSEL;III-V semiconductor;Optical property;Numerical simulation
日期: 2002-10
上传时间: 2012-07-19T01:48:54Z
出版者: SPIE--The International Society for Optical Engineering
摘要: The vertical-cavity surface-emitting lasers (VCSEL) operating in the spectral range near 850 nm usually utilize GaAs/AlGaAs as the active layer materials. In this work, in addition to the traditional unstrained GaAs/AlGaAs semiconductor laser, the characteristics of the strained InGaAs/AlGaAs vertical-cavity surface-emitting laser and the distributed Bragg reflectors (DBR) used in this semiconductor laser are investigated with a PICS3D (abbreviation of Photonic Integrated Circuit Simulator in 3D) simulation program. The simulation results show that the strained InGaAs/AlGaAs VCSEL has a better optical performance than that of the traditional unstrained GaAs/AlGaAs VCSEL. That is, when compared with the unstrained GaAs/AlGaAs quantum well structures, the strained InGaAs/AlGaAs VCSEL has a higher stimulated recombination rate, a lower threshold current, a higher main-side mode suppression ratio, and a higher characteristic temperature, which might be owing to its narrower well width and smaller carrier effective masses.
關聯: Proceedings of SPIE, 4913: 31-40 (Semiconductor Lasers and Applications)
显示于类别:[物理學系] 會議論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML509检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈