English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 23404454      Online Users : 228
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12544

Title: Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes
Authors: Kuo, Yen-Kuang;Tsai, Miao-Chan;Yen, Sheng-Horng;Hsu, Ta-Cheng;Shen, Yu-Jiun
Contributors: 物理學系
Date: 2010-08
Issue Date: 2012-07-19T01:49:00Z
Publisher: IEEE
Abstract: P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The light-current curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.
Relation: IEEE Journal of Quantum Electronics, 46(8): 1214-1220
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML498View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback