National Changhua University of Education Institutional Repository : Item 987654321/12546
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24625440      Online Users : 67
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: Improvement in Output Power of a 460 nm InGaN Light-emitting Diode Using Staggered Quantum Well
Authors: Liao, Chih-Teng;Tsai, Miao-Chan;Liou, Bo-Ting;Yen, Sheng-Horng;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2010-09
Issue Date: 2012-07-19T01:49:03Z
Publisher: American Institute of Physics
Abstract: Staggered quantum well structures are studied to eliminate the influence of polarization-induced electrostatic field upon the optical performance of blue InGaN light-emitting diodes (LEDs). Blue InGaN LEDs with various staggered quantum wells which vary in their indium compositions and quantum well width are theoretically studied and compared by using the APSYS simulation program. According to the simulation results, the best optical characteristic is obtained when the staggered quantum well is designed as In0.20Ga0.80N (1.4 nm)–In0.26Ga0.74N (1.6 nm) for blue LEDs. Superiority of this novelty design is on the strength of its enhanced overlap of electron and hole wave functions, uniform distribution of holes, and suppressed electron leakage in the LED device.
Relation: Journal of Applied Physics, 108(6): 063107-1–063107-6
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback