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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12548

Title: Enhancement in Hole-injection Efficiency of Blue InGaN Light-emitting Diodes from Reduced Polarization by Some Specific Designs for the Electron Blocking Layer
Authors: Kuo, Yen-Kuang;Chang, Jih-Yuan;Tsai, Miao-Chan
Contributors: 物理學系
Date: 2010-10
Issue Date: 2012-07-19T01:49:05Z
Publisher: Optical Society of America
Abstract: Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.
Relation: Optics Letters, 35(19): 3285-3287
Appears in Collections:[物理學系] 期刊論文

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