National Changhua University of Education Institutional Repository : Item 987654321/12548
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题名: Enhancement in Hole-injection Efficiency of Blue InGaN Light-emitting Diodes from Reduced Polarization by Some Specific Designs for the Electron Blocking Layer
作者: Kuo, Yen-Kuang;Chang, Jih-Yuan;Tsai, Miao-Chan
贡献者: 物理學系
日期: 2010-10
上传时间: 2012-07-19T01:49:05Z
出版者: Optical Society of America
摘要: Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.
關聯: Optics Letters, 35(19): 3285-3287
显示于类别:[物理學系] 期刊論文

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