English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20273806      Online Users : 278
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12551

Title: Effect of Normal and Reversed Polarizations on Optical Characteristics of Ultraviolet-violet InGaN Laser Diodes
Authors: Kuo, Yen-Kuang;Horng, Syuan-Huei;Tsai, Miao-Chan;Yen, Sheng-Horng;Chang, Shu-Hsuan
Contributors: 物理學系
Keywords: Semiconductor lasers;Piezoelectric devices;Numerical simulation
Date: 2010-10
Issue Date: 2012-07-19T01:49:07Z
Publisher: Elsevier
Abstract: The optical characteristics of ultraviolet-violet InGaN laser diodes with different numbers of quantum wells under normal and reversed polarizations are numerically investigated. For the laser structures under normal polarization, the lowest threshold current is obtained when the number of quantum wells is two in the spectral range of 380–408 nm. For the laser structures under reversed polarization, the single quantum-well laser structure possesses the lowest threshold current. The simulation results suggest that the physical origin for these phenomena is caused by the sufficiently suppressed electron and hole leakage currents when the laser diode is under reversed polarization.
Relation: Optics Communications, 283(19): 3698-3702
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML439View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback