English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 30055982      線上人數 : 768
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/12553

題名: Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier
作者: Yen, Sheng-Horng;Tsai, Meng-Lun;Tsai, Miao-Chan;Chang, Shu-Jeng;Kuo, Yen-Kuang
貢獻者: 物理學系
日期: 2010-12
上傳時間: 2012-07-19T01:49:09Z
出版者: IEEE
摘要: In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.
關聯: IEEE Photonics Technology Letters, 22(24): 1787-1789
顯示於類別:[物理學系] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML666檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋