English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 23404617      Online Users : 229
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12555

Title: Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses
Authors: Tsai, Miao-Chan;Yen, Sheng-Horng;Lu, Ying-Chung;Kuo, Yen-Kuang
Contributors: 物理學系
Date: 2011-01
Issue Date: 2012-07-19T01:49:11Z
Publisher: IEEE
Abstract: This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
Relation: IEEE Photonics Technology Letters, 23(2): 76-78
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML477View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback