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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12555

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12555

Title:	Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses
Authors:	Tsai, Miao-Chan;Yen, Sheng-Horng;Lu, Ying-Chung;Kuo, Yen-Kuang
Contributors:	物理學系
Date:	2011-01
Issue Date:	2012-07-19T01:49:11Z
Publisher:	IEEE
Abstract:	This letter demonstrates the outcomes of numerical investigation of the InGaN light-emitting diodes with varied barrier thicknesses. Compared with the original structure with equal barrier thickness, the analyses focus on hole injection efficiency, carrier distribution, electron leakage, and radiative recombination. Simulation approach yields to a result that, when varied barrier thicknesses are used, more than one quantum well contributes to radiative recombination at high injection current which leads to the improvement of efficiency droop. Further analysis indicates that the thinner barrier located close to the p-side layers is beneficial for increasing hole injection, which leads to the reduction of electron leakage; moreover, holes can be confined in more quantum wells in such condition as well.
Relation:	IEEE Photonics Technology Letters, 23(2): 76-78
Appears in Collections:	[Department of Physics] Periodical Articles

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