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http://ir.ncue.edu.tw/ir/handle/987654321/12557
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題名: | Correlation of Barrier Material and Quantum-well Number for InGaN/(In)GaN Blue Light-emitting Diodes |
作者: | Chang, Jih-Yuan;Kuo, Yen-Kuang;Tsai, Miao-Chan |
貢獻者: | 物理學系 |
關鍵詞: | Device simulations;Efficiency droop;InGaN;light-emitting diodes |
日期: | 2011-03
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上傳時間: | 2012-07-19T01:49:12Z
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出版者: | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
摘要: | Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions. |
關聯: | Physica Status Solidi (a), 208(3): 729-734 |
顯示於類別: | [物理學系] 期刊論文
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