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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12557

Title: Correlation of Barrier Material and Quantum-well Number for InGaN/(In)GaN Blue Light-emitting Diodes
Authors: Chang, Jih-Yuan;Kuo, Yen-Kuang;Tsai, Miao-Chan
Contributors: 物理學系
Keywords: Device simulations;Efficiency droop;InGaN;light-emitting diodes
Date: 2011-03
Issue Date: 2012-07-19T01:49:12Z
Publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Abstract: Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions.
Relation: Physica Status Solidi (a), 208(3): 729-734
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