National Changhua University of Education Institutional Repository : Item 987654321/12558

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30030696 Online Users : 587

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/12558

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/12558

Title:	Deep-ultraviolet Light-emitting Diodes with Gradually Increased Barrier Thicknesses from N-layers to P-layers
Authors:	Tsai, Miao-Chan;Yen, Sheng-Horng;Kuo, Yen-Kuang
Contributors:	物理學系
Date:	2011-03
Issue Date:	2012-07-19T01:49:14Z
Publisher:	American Institute of Physics
Abstract:	In this work, the structure with gradually increased barrier thicknesses from the n-layers to p-layers is proposed to replace the traditional structure with equal barrier thickness in deep-ultraviolet AlGaN light-emitting diodes. Simulation approach yields to a result that, when increased barrier thicknesses are used, the distribution of electron and hole carriers inside the active region becomes quite uniform, which leads to efficient recombination of electrons and holes and thereby a significant enhancement in output power.
Relation:	Applied Physics Letters, 98(11): 111114-1–111114-3
Appears in Collections:	[Department of Physics] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	731	View/Open