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Title: 415 nm紫光氮化銦鎵量子井雷射電子溢流特性之探討
Authors: 張詒安;陳秀芬;謝尚衛;吳佩璇;蔡孟倫;張誌原;郭艷光;劉柏挺
Contributors: 物理學系
Date: 2002
Issue Date: 2012-07-19T01:49:23Z
Abstract: 氮化物半導體在發光二極體與雷射二極體,都有極為重要的應用。由於氮化銦鎵之異質介面的band-offset ratio比起磷化物與砷化物要來得低,因此其電子溢流的問題較為嚴重。本篇文章針對氮化銦鎵材料設計一個側射型的量子井雷射結構,並詳細探討其雷射性能。在電子溢流方面,研究結果顯示,於活性層靠近p-type處加入一層AlGaN阻礙層,可以有效減輕電子溢流對雷射性能的影響。另一方面,適當地提高p-type摻雜濃度也可以有效降低元件之Vf值。
Relation: 2002年台灣光電科技研討會, paper TA1-3, OPT’02 Proceedings I: 7-9
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